This presentation will focus on the measured reflection and transmission characteristics of silicon carbide through a range wavelengths centered around 10.6 and 9.4 micrometers using a carbon dioxide laser. Quantum selection rules dictate the available output lines relating to the rotational energy transitions generating the obtainable output spectra. These lines delimit the span of accessible output power levels, each relating to a distinctive percentage of energy absorption and therefore a distinctive temperature of the silicon carbide wafer. The aim of this research is to find an optimal wavelength for maximum flux absorbed by the wafer capable of generating a target temperature for carbon dioxide laser induced heteroepitaxial synthesis of graphene on silicon carbide.
